| PART |
Description |
Maker |
| K4J52324QC K4J52324QC-BJ12 K4J52324QC-BC20 K4J5232 |
512Mbit GDDR3 SDRAM 512MB的GDDR3 SDRAM
|
http://
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| V54C3256164VALT6 V54C3256804VAT V54C3256404VAT V54 |
256Mbit SDRAM 3.3 VOLT, TSOP II / SOC BGA / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4 56Mbit SDRAM.3伏，第二的TSOP /系统芯片的BGA / WBGA包装16米x 162 × 84米4
|
Mosel Vitelic, Corp.
|
| H5RS5223CFR-N0C H5RS5223CFR-11C H5RS5223CFR-14C H5 |
512Mbit (16Mx32) GDDR3 SDRAM
|
Hynix Semiconductor
|
| K4N56163QF-GC25 K4N56163QF-GC30 K4N56163QF-GC37 |
256Mbit gDDR2 SDRAM
|
Samsung Electronic
|
| K4S560432D-NC75 K4S560432D-NC7C K4S560432D-NC1H K4 |
256Mbit SDRAM, LVTTL, 133MHz
|
Samsung Electronic
|
| V54C3256164VBUC V54C3256164VBUT V54C3256164VBLT7 |
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
LOW POWER 256Mbit SDRAM 3.3 VOLT, 54-BALL SOC BGA 54-PIN TSOPII 16M X 16
LOW POWER 256Mbit SDRAM 3.3 VOLT/ 54-BALL SOC BGA 54-PIN TSOPII 16M X 16
|
MOSEL-VITELIC
Mosel Vitelic, Corp.
Mosel Vitelic Corp
|
| K4S561632D K4S561632D-TC_L75 K4S561632D-TC_L1H K4S |
256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| HYB25D256400AT-7 HYB25D256800AT-7 HYB25D256400AT-8 |
256Mbit (32Mx8) DDR266A (2-3-3)
256Mbit (64Mx4) DDR 200 (2-2-2) End-of-Life
256Mbit (64Mx4) DDR266A (2-3-3) ？的256Mbit4Mx4）DDR266A-3-3）？
|
Infineon Technologies AG
|
| M65KG256AB |
256Mbit (4 Banks x 4M x 16) 1.8V Supply, 133MHz Clock Rate, DDR Low Power SDRAM
|
STMicroelectronics
|
| HYB18H256321BF HYB18H256321BF-11_12_14 |
256-Mbit GDDR3 Graphics RAM GDDR3 Graphics RAM
|
Qimonda AG
|
| HYB18H1G321AF HYB18H1G321AF-10_11_14 |
GDDR3 Graphics RAM 1-Gbit GDDR3 Graphics RAM
|
Qimonda AG
|
| HYB18H1G321AF-10 HYB18H1G321AF-11 |
GDDR3 Graphics RAM 1-Gbit GDDR3 Graphics RAM
|
Qimonda AG
|
